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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V *Complement to Type 2SB1258 APPLICATIONS *Driver for solenoid, relay and motor, series regulator, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE 120 UNIT V 120 6 6 10 1 30 150 -55~150 V V A A A W .cn mi e Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1785 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 3mA B 1.5 V A ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain--Bandwidth Product Switching times ton Turn-on Time tstg Storage Time tf Fall Time w w scs .i w IE= 0.1A; VCE= 12V .cn mi e 70 pF 100 MHz 0.5 s IC= 3A; IB1= -IB2= 3mA; VCC= 30V; RL= 10 5.5 s 1.5 s isc Websitewww.iscsemi.cn 2 |
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